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ニュースリリース

プレスリリース:2012年8月16日

新製品情報 ローノイズ pHEMT (超低雑音タイプ)

今回ご紹介するのはBeRex (べレックス)社製広帯域ウルトラローノイズpHEMT LNA, BCLシリーズでございます。

BCL016B: http://www.berex.com/Products/Documents/BCL016B.pdf
  • 特長
NF:0.4dB @ 12GHz
ゲイン:13.5dB @ 12GHz
周波数:~40GHz

BeRex Introduces the BCL016B Ultra-Low Noise pHEMT Chip BeRex, Inc. extends its pHEMT product offerings by announcing the immediate availability of its BCL016B Ultra-low noise pHEMT LNA chip for wideband and narrowband RF applications up to 40 GHz

San Jose, CA. March 19, 2012 BeRex a leading supplier of high performance GaAs pHEMT (pseudomorphic high electron mobility transistor) chips, today extends its offering with the BCL016B an Ultra-low noise pHEMT chip with a remarkably low Noise Figure of 0.4 dB with a high Associated Gain of 13.5 dB typical at 12 GHz and a robust Power In (Pin) of up to 20dBm. Featuring a recessed gate with a nominal length of 0.15μm and width of 160μm the BCL016B, like the all other BeRex pHEMT products, is produced using state of the art metallization with Si3N4 passivation and is carefully screened to assure high reliability.

The BCL016B LNA is available in bare-die and provides low noise and high insertion gain over a broad band, up to 40 GHz, making it ideal for commercial or military low noise RF and microwave amplifiers .

“BeRex, Inc. is committed to being a total solutions provider by providing a “one- stop-shop” for high performance and reliability power and LNA pHEMT devices. With the BCL016B LNA we have the perfect complement to our other pHEMT products allowing BeRex to offer our clients a full line of high quality pHEMT products” commented Dr. Alex Yoo, Vice President of Research and Development.


ベレックス社詳細は http://netwell.co.jp/wireless/maker/berex.html


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